The NTNUS3171PZT5G is a single P-channel MOSFET in a 1.0 x 0.6 mm SOT-1123 surface-mount package, designed for power management in ultra-portable electronics. It has a drain-to-source voltage rating of -20 V and a continuous drain current of -150 mA at 25°C, with a pulsed drain current of -600 mA. On-resistance is 3.5 Ω at -4.5 V gate voltage and 7.0 Ω at -1.5 V. The device features an ultra-thin profile below 0.5 mm and is lead-free, meeting RoHS standards. Thermal resistance is 1000 °C/W under steady-state conditions with a 2 mm² FR4 pad. It is suitable for high-speed interfacing and high-side switching in compact devices.
Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:150mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV; Power Dissipation:-125mW; Product Range:-RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 23AC7908 |
| Product Name | Channel Type Onsemi |
| Package Type | TO-3 |
