onsemi Single FETs, MOSFETs NTMYS1D3N04CTWG

The NTMYS1D3N04CTWG is a single N-channel MOSFET in an LFPAK4 package measuring 4.90 mm x 4.15 mm x 1.15 mm, designed for high-current switching applications. It has a drain-to-source voltage rating of 40 V, a maximum continuous drain current of 252 A at TC = 25 °C, and a maximum RDS(on) of 1.15 mΩ at 10 V gate voltage. The device supports a peak pulsed drain current of 900 A and dissipates up to 134 W at TC = 25 °C. Thermal resistance is 1.12 °C/W from junction to case and 39 °C/W from junction to ambient when mounted on a 650 mm², 2 oz. Cu FR4 board. It operates from -55 °C to +175 °C junction temperature and is RoHS compliant. The part is surface-mounted and meets the industry-standard LFPAK package profile.