onsemi Single FETs, MOSFETs NTMT100N60S5H

The NTMT100N60S5H is a 600 V, N-channel MOSFET in a Power88 PQFN4 8x8 mm surface-mount package, designed for high-efficiency switching in telecom, server, EV charger, UPS, solar, and industrial power supplies. It has a maximum continuous drain current of 27 A at 25°C case temperature and a typical on-resistance of 80 mΩ at 10 V gate voltage. The device is 100% avalanche tested with a single-pulse avalanche energy rating of 230 mJ and a repetitive avalanche energy of 1.79 mJ. Thermal resistance is 0.7°C/W junction-to-case and 45°C/W junction-to-ambient. It features a kelvin source configuration to reduce parasitic inductance and complies with RoHS, is Pb-free, halogen-free, and BFR-free. The package is rated for operating junction temperatures from -55°C to +150°C.