onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD3P102R2 NTMSD3P102R2

Power Field-Effect Transistor

Manufacturer: ON Semiconductor
Win Source Part Number: 101488-NTMSD3P102R2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 730mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.34A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 750pF @ 16V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.05A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

P-Channel 20V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC

2340mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SOP-8 Product overview: NTMSD3P102R2 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 2340mA, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2340mA, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMSD3P102R2 can be used for catalog matching and distributor lookup.