Manufacturer: ON Semiconductor
Win Source Part Number: 025816-NTMS5P02R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 790mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.95A (Ta)
Gate-Source Threshold Voltage: 1.25V @ 250μA
Max Gate Charge: 35nC @ 4.5V
Max Input Capacitance: 1900pF @ 16V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 33 mOhm @ 5.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
MOSFET P-CH 20V 3.95A 8SOIC
P-Channel 20V 3.95A (Ta) 790mW (Ta) Surface Mount 8-SOIC
P-Channel 20V 3.95A (Ta) 790mW (Ta) Surface Mount 8-SOIC
P-Channel 20V 3.95A (Ta) 790mW (Ta) Surface Mount 8-SOIC
P-Channel Power MOSFET, -20V, -5.4A, 33mΩ, SOIC-8 Product overview: NTMS5P02R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -20V, -5.4A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -5.4A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS5P02R2G can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor
P CHANNEL MOSFET, -20V, 5.4A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
MOSFET P-CH 20V 3.95A 8SOIC
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 025816-NTMS5P02R2G | NTMS5P02R2G | NTMS5P02R2GOSDKR-ND | 278-NTMS5P02R2G | NTMS5P02R2G | 61K1300 | NTMS5P02R2G | NTMS5P02R2G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS5P02R2G | Single FETs, MOSFETs | Single FETs, MOSFETs | P-Channel -20V -5.4A SOIC MOSFET Transistor | P Channel Mosfet, -20V, 5.4A, Soic; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| PD | 790 milliwatts | 790 milliwatts | 790 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
