Manufacturer: ON Semiconductor
Win Source Part Number: 116257-NTMS4706NR2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 830mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.4A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 950pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 10.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
N-Channel 30V 6.4A (Ta) 830mW (Ta) Surface Mount 8-SOIC
MOSFET N-CH 30V 6.4A 8SOIC
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 116257-NTMS4706NR2 | NTMS4706NR2-ND | NTMS4706NR2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4706NR2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | ||
| PD | 830 milliwatts |
