The NTMFS5C677NL is an N-Channel MOSFET with a maximum drain-to-source voltage of 60V and a continuous drain current rating of 36A. It features a low on-resistance of 15.0 mOc at a gate-source voltage of 10V, which helps minimize conduction losses. The device is housed in a compact DFN package measuring 5x6 mm, making it suitable for space-constrained applications. It is RoHS compliant and lead-free, ensuring compatibility with modern environmental standards. The MOSFET exhibits low total gate charge, which reduces driver losses, and has a maximum power dissipation of 37W at a junction temperature of 25¬8C. The operating temperature range is from -55¬8C to +175¬8C, providing versatility for various applications. This device is ideal for engineers seeking efficient power management solutions in their designs.
N-Channel 60V 11A (Ta), 36A (Tc) 3.5W (Ta), 37W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Power MOSFET, Single N-Channel, 60 V, 36 A, 15.0 mΩ, 1500-REEL Product overview: NTMFS5C677NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, 36 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 36 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMFS5C677NLT1G can be used for catalog matching and distributor lookup.
Win Source Part Number: 1157110-NTMFS5C677NL
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 25µA
Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 54 pct.
MSL Level: Vendor Undefined
REACH Status: Vendor Undefined
Mfr: onsemi
Other Names: 2156-NTMFS5C677NLT1G
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 60V 11A/36A 5DFN
MOSFET, N-CH, 60V, 36A, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 488-NTMFS5C677NLT1GTR-ND | 278-NTMFS5C677NLT1G | 1157110-NTMFS5C677NLT1G | NTMFS5C677NLT1G | NTMFS5C677NLT1G | 99AC9411 |
| Product Name | Single FETs, MOSFETs | N-Channel 60 V 36 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 36A, Dfn; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | 8-PowerTDFN, 5 Leads | SOT3 | 8-PowerTDFN, 5 Leads | TO-3 | ||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| QG | 9.7 nC |
