onsemi 25V 269A MOSFET Transistor NTMFS4H013NFT1G

Single N−Channel Power MOSFET 25V, 269A, 0.9mΩ, 1500-REEL Product overview: NTMFS4H013NFT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 269A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 269A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMFS4H013NFT1G can be used for catalog matching and distributor lookup.

N-Channel 25V 43A (Ta), 269A (Tc) 2.7W (Ta), 104W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Manufacturer: ON Semiconductor
Win Source Part Number: 812053-NTMFS4H013NFT1G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 2.7W , 104W (Tc)
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 0.9mOhm at 30A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3923pF at 12V
Current - Continuous Drain (Id) at 25°C: 43A , 269A (Tc)
Vgs(th) (Maximum) at Id: 2.1V at 250μA
Maximum Vgs: ±20V