onsemi Single FETs, MOSFETs NTMFS4H013NFT1G

Description
N-Channel 25V 43A (Ta), 269A (Tc) 2.7W (Ta), 104W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Description
N-Channel 25V 43A (Ta), 269A (Tc) 2.7W (Ta), 104W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - NTMFS4H013NFT1G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMFS4H013NFT1G-ND
Single FETs, MOSFETs NTMFS4H013NFT1G-ND
N-Channel 25V 43A (Ta), 269A (Tc) 2.7W (Ta), 104W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 25V 43A (Ta), 269A (Tc) 2.7W (Ta), 104W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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FETs - Single - NTMFS4H013NFT1G - 812053-NTMFS4H013NFT1G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - NTMFS4H013NFT1G
812053-NTMFS4H013NFT1G
FETs - Single - NTMFS4H013NFT1G 812053-NTMFS4H013NFT1G
Manufacturer: ON Semiconductor Win Source Part Number: 812053-NTMFS4H013NFT 1G Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: 150°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 2.7W , 104W (Tc) Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 0.9mOhm at 30A, 10V Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 3923pF at 12V Current - Continuous Drain (Id) at 25°C: 43A , 269A (Tc) Vgs(th) (Maximum) at Id: 2.1V at 250μA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 812053-NTMFS4H013NFT1G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 2.7W , 104W (Tc)
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 0.9mOhm at 30A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3923pF at 12V
Current - Continuous Drain (Id) at 25°C: 43A , 269A (Tc)
Vgs(th) (Maximum) at Id: 2.1V at 250μA
Maximum Vgs: ±20V

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Sheung Wan, Hong Kong
MOSFET FETKY SO8FL 25V 35A

MOSFET FETKY SO8FL 25V 35A

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFS4H013NFT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMFS4H013NFT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMFS4H013NFT1G
MOSFET N-CH 25V 43A/269A 5DFN

MOSFET N-CH 25V 43A/269A 5DFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTMFS4H013NFT1G-ND 812053-NTMFS4H013NFT1G NTMFS4H013NFT1G NTMFS4H013NFT1G
Product Name Single FETs, MOSFETs FETs - Single - NTMFS4H013NFT1G MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type 8-PowerTDFN, 5 Leads SOT3 Surface Mount
QG 56 nC
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