onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4847NAT1G NTMFS4847NAT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 060670-NTMFS4847NAT1 G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 880mW (Ta), 48.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN, 5 Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11.5A (Ta), 85A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 28nC @ 4.5V Max Input Capacitance: 2614pF @ 12V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 4.1 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 060670-NTMFS4847NAT1 G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 880mW (Ta), 48.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN, 5 Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11.5A (Ta), 85A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 28nC @ 4.5V Max Input Capacitance: 2614pF @ 12V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 4.1 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4847NAT1G - 060670-NTMFS4847NAT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4847NAT1G
060670-NTMFS4847NAT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4847NAT1G 060670-NTMFS4847NAT1G
Manufacturer: ON Semiconductor Win Source Part Number: 060670-NTMFS4847NAT1 G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 880mW (Ta), 48.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN, 5 Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11.5A (Ta), 85A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 28nC @ 4.5V Max Input Capacitance: 2614pF @ 12V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 4.1 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 060670-NTMFS4847NAT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN, 5 Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.5A (Ta), 85A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 28nC @ 4.5V
Max Input Capacitance: 2614pF @ 12V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 4.1 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - NTMFS4847NAT1G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMFS4847NAT1G-ND
Single FETs, MOSFETs NTMFS4847NAT1G-ND
N-Channel 30V 11.5A (Ta), 85A (Tc) 880mW (Ta), 48.4W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 30V 11.5A (Ta), 85A (Tc) 880mW (Ta), 48.4W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Buy Now Datasheet
MOSFET NFET SO8FL 30V 85A 4.1mOhm - 598-NTMFS4847NAT1G - Utmel Electronic Limited
Hong Kong, China
MOSFET NFET SO8FL 30V 85A 4.1mOhm
598-NTMFS4847NAT1G
MOSFET NFET SO8FL 30V 85A 4.1mOhm 598-NTMFS4847NAT1G
MOSFET NFET SO8FL 30V 85A 4.1mOhm

MOSFET NFET SO8FL 30V 85A 4.1mOhm

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFS4847NAT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMFS4847NAT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMFS4847NAT1G
MOSFET N-CH 30V 11.5A/85A 5DFN

MOSFET N-CH 30V 11.5A/85A 5DFN

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 060670-NTMFS4847NAT1G NTMFS4847NAT1G-ND 598-NTMFS4847NAT1G NTMFS4847NAT1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4847NAT1G Single FETs, MOSFETs MOSFET NFET SO8FL 30V 85A 4.1mOhm Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 880 to 48400 milliwatts 48100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3; 5-DFN (5x6) (8-SOFL) 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
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