40V 7.4A Dual N-Ch MOSFET SOIC Logic Level 25mR Product overview: NTMD5838NLR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40V, 7.4A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40V, 7.4A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTMD5838NLR2G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1232536-NTMD5838NLR2
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 7.4A
Power - Max: 2.1W
Family Name: NTMD5838NL
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: 8-SOIC
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 785pF @ 20V
Rds On (Maximum) @ Id, Vgs: 25 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): NTMD5836NLR2G;
Introduction Date: April 19, 2011
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N-Channel (Dual) 40V 7.4A 2.1W Surface Mount 8-SOIC
DISCONTINUED BY MANUFACTURER, IC, MOSFET, DUAL N-CH, 40V, 7.4A, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
MOSFET, DUAL N-CH, 40V, 7.4A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:7.4A; On Resistance Rds(on):0.0162ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
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MOSFET 2N-CH 40V 7.4A 8SOIC
MOSFET 2N-CH 40V 7.4A 8SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Radwell International | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-NTMD5838NLR2G | 1232536-NTMD5838NLR2G | NTMD5838NLR2GOSTR-ND | 48606068 | 81Y7050 | NTMD5838NLR2G | NTMD5838NLR2G | NTMD5838NLR2G |
| Product Name | Dual 40V 7.4A SOIC MOSFET Transistor | Electrical Parts - NTMD5838NLR2G | FET, MOSFET Arrays | Transistor | Mosfet, Dual N-Ch, 40V, 7.4A, Soic-8; Transistor Polarity Onsemi | MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| PD | 2100 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| QG | 17 nC | |||||||
| Package Type | SOT3 | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154, 3.90mm Width) |
