Mosfet Array 2 P-Channel (Dual) 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)
Manufacturer: ON Semiconductor
Win Source Part Number: 025787-NTLJD3115PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WDFN (2x2)
Maximum Power Dissipation: 710mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 6.2nC @ 4.5V
Max Input Capacitance: 531pF @ 10V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
Dual P-Channel MOSFET -20V, -4.1A, 100mR, DFN6 Product overview: NTLJD3115PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, -20V, -4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -20V, -4.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTLJD3115PT1G can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V 2.3A 6-WDFN
MOSFET 2P-CH 20V 2.3A 6WDFN
MOSFET PFET 2X2 20V 4.1A 106MOHM
DUAL P CHANNEL MOSFET, -20V, WDFN6, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.3A; On Resistance Rds(on):0.075ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET, DUAL P-CH, -20V, -3.3A, WDFN; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV;RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTLJD3115PT1GOSTR-ND | 025787-NTLJD3115PT1G | 289-NTLJD3115PT1G | NTLJD3115PT1G | NTLJD3115PT1G | NTLJD3115PT1G | 83K8684 | 50AC6490 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJD3115PT1G | P-Channel Dual -20V -4.1A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Dual P Channel Mosfet, -20V, Wdfn6, Full Reel; Transistor Polarity Onsemi | Mosfet, Dual P-Ch, -20V, -3.3A, Wdfn; Transistor Polarity Onsemi |
| Package Type | 6-WDFN Exposed Pad | SOT3; 6-WDFN (2x2) | 6-WDFN Exposed Pad | TO-3 | TO-3 | |||
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| PD | 710 milliwatts | 710 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
