MOSFET 2N-CH 60V 295MA SOT363
Manufacturer: ON Semiconductor
Win Source Part Number: 1083893-NTJD5121NT2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 295mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.9nC @ 4.5V
Max Input Capacitance: 26pF @ 20V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array 2 N-Channel (Dual) 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array 2 N-Channel (Dual) 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Dual N-Ch JFET, 60V, 295mA, 1.6R, SOT-363 Product overview: NTJD5121NT2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 60V, 295mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 295mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTJD5121NT2G can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 60V 0.295A SC88
MOSFET, DUAL N-CH, 60V, 0.295A, SOT-363; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:295mA; On Resistance Rds(on):1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTJD5121NT2G | 1083893-NTJD5121NT2G | NTJD5121NT2GOSTR-ND | 289-NTJD5121NT2G | NTJD5121NT2G | 81Y7047 | NTJD5121NT2G |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJD5121NT2G | FET, MOSFET Arrays | Dual 60V 295mA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 60V, 0.295A, Sot-363; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 295 milliamps | 295 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
