Dual N/P-Ch JFET, 20V, 630mA, 220mR, SOT-363 Product overview: NTJD4105CT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 630mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 630mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTJD4105CT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 025774-NTJD4105CT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NTJD4105C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Power Dissipation: 270mW
Drain-Source Breakdown Voltage: 20V, 8V
Continuous Drain Current at 25°C: 630mA, 775mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 3nC @ 4.5V
Max Input Capacitance: 46pF @ 20V
Maximum Rds On at Id,Vgs: 375 mOhm @ 630mA, 4.5V
Alternative Parts (Cross-Reference): PJT7600_R1_00001; PJT7600_R2_00001; NTJD4105CT2G;
Introduction Date: January 19, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Communications & Networking, Consumer Electronics, Computers & Computer Peripherals, Multimedia
Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
MOSFET N/P-CH 20V/8V SOT-363
MOSFET N/P-CH 20V/8V 0.63A SC88
DUAL N/P CHANNEL MOSFET, 20V, SOT-363; Transistor Polarity:Complementa
MOSFET, N/P CHANNEL, 20V, 0.63A, SOT-363-6; Transistor Polarity:Complementa
MOSFET, N & P CH, 20V, 0.63A, SOT-363-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:920mV;RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-NTJD4105CT1G | 025774-NTJD4105CT1G | NTJD4105CT1GOSDKR-ND | NTJD4105CT1G | NTJD4105CT1G | 10N9722 | 95Y0306 |
| Product Name | Dual 20V 630mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJD4105CT1G | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N/p Channel Mosfet, 20V, Sot-363; Transistor Polarity Onsemi | Mosfet, N & P Ch, 20V, 0.63A, Sot-363-6; Transistor Polarity Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel; N and P-Channel | P-Channel | |||
| PD | 270 milliwatts | 270 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 20 to 8 volts | 20 to 8 volts | |||||
| Package Type | SOT3; SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | TO-3; SOT3 | TO-3; SOT3 |
