onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS5443T1G NTHS5443T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 103437-NTHS5443T1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.6A (Ta) Gate-Source Threshold Voltage: 600mV @ 250μA Max Gate Charge: 12nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 103437-NTHS5443T1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.6A (Ta) Gate-Source Threshold Voltage: 600mV @ 250μA Max Gate Charge: 12nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS5443T1G - 103437-NTHS5443T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS5443T1G
103437-NTHS5443T1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS5443T1G 103437-NTHS5443T1G
Manufacturer: ON Semiconductor Win Source Part Number: 103437-NTHS5443T1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.6A (Ta) Gate-Source Threshold Voltage: 600mV @ 250μA Max Gate Charge: 12nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 103437-NTHS5443T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.6A (Ta)
Gate-Source Threshold Voltage: 600mV @ 250μA
Max Gate Charge: 12nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
P-Channel SMD -20V 3.6A MOSFET Transistor
278-NTHS5443T1G
P-Channel SMD -20V 3.6A MOSFET Transistor 278-NTHS5443T1G
P-Channel MOSFET, -20V, 3.6A, 56mΩ, SMD Product overview: NTHS5443T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -20V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -20V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHS5443T1G can be used for catalog matching and distributor lookup.

P-Channel MOSFET, -20V, 3.6A, 56mΩ, SMD Product overview: NTHS5443T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -20V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -20V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHS5443T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 488-NTHS5443T1GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTHS5443T1GTR-ND
Single FETs, MOSFETs 488-NTHS5443T1GTR-ND
P-Channel 20V 3.6A (Ta) 1.3W (Ta) Surface Mount ChipFET™

P-Channel 20V 3.6A (Ta) 1.3W (Ta) Surface Mount ChipFET™

Buy Now Datasheet
MOSFET P-CH 20V 3.6A CHIPFET - 598-NTHS5443T1G - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 20V 3.6A CHIPFET
598-NTHS5443T1G
MOSFET P-CH 20V 3.6A CHIPFET 598-NTHS5443T1G
MOSFET P-CH 20V 3.6A CHIPFET

MOSFET P-CH 20V 3.6A CHIPFET

Supplier's Site
P Channel Mosfet, -20V, 3.6A, 1206A; Channel Type Onsemi - 45J2154 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 3.6A, 1206A; Channel Type Onsemi
45J2154
P Channel Mosfet, -20V, 3.6A, 1206A; Channel Type Onsemi 45J2154
P CHANNEL MOSFET, -20V, 3.6A, 1206A; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 3.6A, 1206A; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHS5443T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTHS5443T1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTHS5443T1G
MOSFET P-CH 20V 3.6A CHIPFET

MOSFET P-CH 20V 3.6A CHIPFET

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 103437-NTHS5443T1G 278-NTHS5443T1G 488-NTHS5443T1GTR-ND 598-NTHS5443T1G 45J2154 NTHS5443T1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS5443T1G P-Channel SMD -20V 3.6A MOSFET Transistor Single FETs, MOSFETs MOSFET P-CH 20V 3.6A CHIPFET P Channel Mosfet, -20V, 3.6A, 1206A; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 20 volts -20 volts
PD 1300 milliwatts 1300 milliwatts 1300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; ChipFET 8-SMD, Flat Leads TO-3
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