onsemi FET, MOSFET Arrays NTHD4401PT1G

Description
Mosfet Array 2 P-Channel (Dual) 20V 2.1A 1.1W Surface Mount ChipFET™
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Description
Mosfet Array 2 P-Channel (Dual) 20V 2.1A 1.1W Surface Mount ChipFET™
Request a Quote Datasheet

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Product
Description
Supplier Links
FET, MOSFET Arrays - NTHD4401PT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTHD4401PT1GOSTR-ND
FET, MOSFET Arrays NTHD4401PT1GOSTR-ND
Mosfet Array 2 P-Channel (Dual) 20V 2.1A 1.1W Surface Mount ChipFET™

Mosfet Array 2 P-Channel (Dual) 20V 2.1A 1.1W Surface Mount ChipFET™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD4401PT1G - 096286-NTHD4401PT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD4401PT1G
096286-NTHD4401PT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD4401PT1G 096286-NTHD4401PT1G
Manufacturer: ON Semiconductor Win Source Part Number: 096286-NTHD4401PT1G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.1A Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 300pF @ 10V Maximum Rds On at Id,Vgs: 155 mOhm @ 2.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 096286-NTHD4401PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.1A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 300pF @ 10V
Maximum Rds On at Id,Vgs: 155 mOhm @ 2.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHD4401PT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTHD4401PT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTHD4401PT1G
MOSFET 2P-CH 20V 2.1A CHIPFET

MOSFET 2P-CH 20V 2.1A CHIPFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTHD4401PT1GOSTR-ND 096286-NTHD4401PT1G NTHD4401PT1G
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD4401PT1G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-SMD, Flat Leads SOT3; ChipFET
Polarity P-Channel
V(BR)DSS 20 volts
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