Power MOSFET 8V 4.6A 62 mOhm Dual P-Channel ChipFET, ChipFET, 3000-REEL Product overview: NTHD2102PT1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 8V, 4.6A, 62 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 8V, 4.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTHD2102PT1 can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 8V 3.4A 1.1W Surface Mount ChipFET™
Manufacturer: ON Semiconductor
Win Source Part Number: 104729-NTHD2102PT1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 3.4A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 16nC @ 2.5V
Max Input Capacitance: 715pF @ 6.4V
Maximum Rds On at Id,Vgs: 58 mOhm @ 3.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
MOSFET 2P-CH 8V 3.4A CHIPFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-NTHD2102PT1 | NTHD2102PT1OS-ND | 104729-NTHD2102PT1 | NTHD2102PT1 |
| Product Name | P-Channel Dual 8V 4.6A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD2102PT1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | ||
| PD | 1100 milliwatts | 1100 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |