onsemi Single FETs, MOSFETs NTH4L095N065SC1

The NTH4L095N065SC1 is a 650 V silicon carbide N-channel MOSFET in a TO-247-4L package, designed for high-efficiency switching applications such as SMPS, solar inverters, and UPS systems. It has a maximum continuous drain current of 31 A at 25°C case temperature and a typical on-resistance of 70 mΩ at 18 V gate voltage. The device features a Kelvin source pin for reduced gate loop inductance, a total gate charge of 50 nC, and an output capacitance of 89 pF. It is rated for a maximum junction temperature of 175°C, is 100% avalanche tested, and meets RoHS compliance standards.