SILICON CARBIDE (SIC) MOSFET EL
SILICON CARBIDE (SIC) MOSFET EL
SIC MOS TO247-4L 70MOHM 1200V M3
SILICON CARBIDE (SIC) MOSFET EL
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors |
| Product Number | NTH4L070N120M3S | 5556-NTH4L070N120M3S-ND | 57AK6420 | NTH4L070N120M3S |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Sic Mos To247-4L 70Mohm 1200V M3 Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | SiC (Silicon Carbide Junction Transistor) | Silicon Carbide | ||
| V(BR)DSS | 1200 volts | |||
| IDSS | 34000 milliamps |
