The Sic MOSFET, N-Ch, 18V, 55A, TO-247 from Onsemi features a maximum drain-to-source voltage of 650V and a continuous drain current rating of 55A at 25¬8C. It has a low on-resistance of 33 mOc at a gate-source voltage of 18V, making it suitable for high-efficiency applications. The device is designed for high-speed switching with a total gate charge of 105 nC and low output capacitance of 162 pF. It is rated for a power dissipation of 187W and can operate in a temperature range from -55¬8C to +175¬8C. This MOSFET is 100% avalanche tested and is compliant with RoHS standards. Typical applications include switching mode power supplies, solar inverters, and uninterruptible power supplies.
Manufacturer: onsemi
Category: Discrete Semiconductor Products- Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
N-Channel 650V 55A (Tc) 187W (Tc) Through Hole TO-247-4L
SILICON CARBIDE MOSFET, NCHANNEL Product overview: NTH4L045N065SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTH4L045N065SC1 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 650V, 55A, TO-247 ROHS COMPLIANT: YES
SIC MOSFET, N-CH, 18V, 55A, TO-247; MOSFET Module Configuration:Single
SILICON CARBIDE MOSFET, NCHANNEL
SILICON CARBIDE MOSFET, NCHANNEL
| Win Source Electronics | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 5556-NTH4L045N065SC1-ND | 2296460P | 278-NTH4L045N065SC1 | 50AJ5889 | 81AJ0236 | NTH4L045N065SC1 | NTH4L045N065SC1 | |
| Product Name | Discrete Semiconductor Products- Transistors -FETs, MOSFETs- Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | N-Channel MOSFET Transistor | Mosfet, N-Ch, 650V, 55A, To-247 Rohs Compliant Onsemi | Sic Mosfet, N-Ch, 18V, 55A, To-247; Mosfet Module Configuration Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | SOT3 | TO-247; TO-247-4 | TO-247; TO-247 | Tube | TO-3; TO-247 | TO-3; TO-247 | TO-247; TO-247-4 | TO-247; TO-247-4 |
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 650 volts | 650 volts |
