onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTGS3441PT1G NTGS3441PT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 060640-NTGS3441PT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 510mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 345pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 060640-NTGS3441PT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 510mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 345pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTGS3441PT1G - 060640-NTGS3441PT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTGS3441PT1G
060640-NTGS3441PT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTGS3441PT1G 060640-NTGS3441PT1G
Manufacturer: ON Semiconductor Win Source Part Number: 060640-NTGS3441PT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 510mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 345pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 060640-NTGS3441PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 510mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 345pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
P-Channel 20V 3.16A 110 mOhm MOSFET Transistor
278-NTGS3441PT1G
P-Channel 20V 3.16A 110 mOhm MOSFET Transistor 278-NTGS3441PT1G
Power MOSFET 20V 3.16A 110 mOhm Single P-Channel TSOP6, TSOP-6, 3000-REEL Product overview: NTGS3441PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 3.16A, 110 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.16A, 110 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTGS3441PT1G can be used for catalog matching and distributor lookup.

Power MOSFET 20V 3.16A 110 mOhm Single P-Channel TSOP6, TSOP-6, 3000-REEL Product overview: NTGS3441PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 3.16A, 110 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.16A, 110 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTGS3441PT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NTGS3441PT1G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTGS3441PT1G-ND
Single FETs, MOSFETs NTGS3441PT1G-ND
P-Channel 20V 1.8A (Ta) 510mW (Ta) Surface Mount 6-TSOP

P-Channel 20V 1.8A (Ta) 510mW (Ta) Surface Mount 6-TSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTGS3441PT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTGS3441PT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTGS3441PT1G
MOSFET P-CH 20V 1.8A 6TSOP

MOSFET P-CH 20V 1.8A 6TSOP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 060640-NTGS3441PT1G 278-NTGS3441PT1G NTGS3441PT1G-ND NTGS3441PT1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTGS3441PT1G P-Channel 20V 3.16A 110 mOhm MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 20 volts
PD 510 milliwatts 510 milliwatts
Unlock Full Specs
to access all available technical data