onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTGD4169FT1G NTGD4169FT1G

Manufacturer: ON Semiconductor
Win Source Part Number: 1083880-NTGD4169FT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 900mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -25°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.5nC @ 4.5V
Max Input Capacitance: 295pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 90 mOhm @ 2.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Small Signal MOSFET 30V 2.6A 90 mOhm Dual N-Channel TSOP6 FETKY, TSOP-6, 3000-REEL Product overview: NTGD4169FT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 30V, 2.6A, 90 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTGD4169FT1G can be used for catalog matching and distributor lookup.

N-Channel 30V 2.6A (Ta) 900mW (Ta) Surface Mount 6-TSOP