P-Channel MOSFET -60V, -2.6A, 145mΩ, SOT-223 Product overview: NTF2955T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTF2955T1G can be used for catalog matching and distributor lookup.
MOSFET P-CH 60V 1.7A SOT223
Manufacturer: ON Semiconductor
Win Source Part Number: 025755-NTF2955T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 14.3nC @ 10V
Max Input Capacitance: 492pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 185 mOhm @ 2.4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Motor Drive & Control, Industrial
P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
P CHANNEL MOSFET, -60V, 2.6A, SOT-223; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, P, 60V, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:1W;RoHS Compliant: Yes
P CHANNEL MOSFET, -60V, 2.6A, SOT-223, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1W RoHS Compliant: Yes
MOSFET P-CH 60V 1.7A SOT223
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTF2955T1G | NTF2955T1G | 025755-NTF2955T1G | 6889130 | 6889130P | NTF2955T1GOSTR-ND | 10N9718 | 58M9896 | 45J2134 | NTF2955T1G | NTF2955T1G |
| Product Name | P-Channel -60V -2.6A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF2955T1G | MOSFETs | MOSFETs | Single FETs, MOSFETs | P Channel Mosfet, -60V, 2.6A, Sot-223; Channel Type Onsemi | Mosfet, P, 60V, Sot-223; Transistor Polarity Onsemi | P Channel Mosfet, -60V, 2.6A, Sot-223, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| PD | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 60 volts | 60 volts |
