onsemi MOSFETs NTF2955T1G

MOSFET P-Channel 60V 2.6A SOT223

MOSFET P-Channel 60V 2.6A SOT223

MOSFET P-Channel 60V 2.6A SOT223

MOSFET P-CH 60V 1.7A SOT223

P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)

P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)

P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)

P-Channel MOSFET -60V, -2.6A, 145mΩ, SOT-223 Product overview: NTF2955T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTF2955T1G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 025755-NTF2955T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 14.3nC @ 10V
Max Input Capacitance: 492pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 185 mOhm @ 2.4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Motor Drive & Control, Industrial