onsemi Single FETs, MOSFETs NTD95N02R

Description
N-Channel 24V 12A (Ta), 32A (Tc) 1.25W (Ta), 86W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 24V 12A (Ta), 32A (Tc) 1.25W (Ta), 86W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTD95N02R-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD95N02R-ND
Single FETs, MOSFETs NTD95N02R-ND
N-Channel 24V 12A (Ta), 32A (Tc) 1.25W (Ta), 86W (Tc) Surface Mount DPAK

N-Channel 24V 12A (Ta), 32A (Tc) 1.25W (Ta), 86W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD95N02R - 1083863-NTD95N02R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD95N02R
1083863-NTD95N02R
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD95N02R 1083863-NTD95N02R
Manufacturer: ON Semiconductor Win Source Part Number: 1083863-NTD95N02R Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 86W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 12A (Ta), 32A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 21nC @ 4.5V Max Input Capacitance: 2400pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083863-NTD95N02R
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta), 86W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 12A (Ta), 32A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Max Input Capacitance: 2400pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD95N02R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD95N02R
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD95N02R
MOSFET N-CH 24V 12A/32A DPAK

MOSFET N-CH 24V 12A/32A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD95N02R-ND 1083863-NTD95N02R NTD95N02R
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD95N02R Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 24 volts
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