onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD80N02T4G NTD80N02T4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 004190-NTD80N02T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Family Name: NTD80N02 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 42nC @ 4.5V Max Input Capacitance: 2600pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): IRLR8711CTRPBF; IRLR8711CTRLPBF; IRLR8711C; Introduction Date: February 25, 2002 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 004190-NTD80N02T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Family Name: NTD80N02 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 42nC @ 4.5V Max Input Capacitance: 2600pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): IRLR8711CTRPBF; IRLR8711CTRLPBF; IRLR8711C; Introduction Date: February 25, 2002 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD80N02T4G - 004190-NTD80N02T4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD80N02T4G
004190-NTD80N02T4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD80N02T4G 004190-NTD80N02T4G
Manufacturer: ON Semiconductor Win Source Part Number: 004190-NTD80N02T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Family Name: NTD80N02 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 42nC @ 4.5V Max Input Capacitance: 2600pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): IRLR8711CTRPBF; IRLR8711CTRLPBF; IRLR8711C; Introduction Date: February 25, 2002 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 004190-NTD80N02T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Family Name: NTD80N02
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 42nC @ 4.5V
Max Input Capacitance: 2600pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.8 mOhm @ 80A, 10V
Alternative Parts (Cross-Reference): IRLR8711CTRPBF; IRLR8711CTRLPBF; IRLR8711C;
Introduction Date: February 25, 2002
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - NTD80N02T4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD80N02T4GOSTR-ND
Single FETs, MOSFETs NTD80N02T4GOSTR-ND
N-Channel 24V 80A (Tc) 75W (Tc) Surface Mount DPAK

N-Channel 24V 80A (Tc) 75W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD80N02T4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD80N02T4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD80N02T4G
MOSFET N-CH 24V 80A DPAK

MOSFET N-CH 24V 80A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 004190-NTD80N02T4G NTD80N02T4GOSTR-ND NTD80N02T4G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD80N02T4G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 24 volts
PD 75000 milliwatts
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