onsemi Single FETs, MOSFETs NTD5807NT4G

Description
N-Channel 40V 23A (Tc) 33W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 40V 23A (Tc) 33W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

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Product
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Single FETs, MOSFETs - NTD5807NT4G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD5807NT4G-ND
Single FETs, MOSFETs NTD5807NT4G-ND
N-Channel 40V 23A (Tc) 33W (Tc) Surface Mount DPAK

N-Channel 40V 23A (Tc) 33W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5807NT4G - 060626-NTD5807NT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5807NT4G
060626-NTD5807NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5807NT4G 060626-NTD5807NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 060626-NTD5807NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 603pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 31 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 060626-NTD5807NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 603pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 31 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD5807NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD5807NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD5807NT4G
MOSFET N-CH 40V 23A DPAK

MOSFET N-CH 40V 23A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD5807NT4G-ND 060626-NTD5807NT4G NTD5807NT4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5807NT4G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 40 volts
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