onsemi Single FETs, MOSFETs NTD4960NT4G

Description
N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTD4960NT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD4960NT4GOSTR-ND
Single FETs, MOSFETs NTD4960NT4GOSTR-ND
N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Surface Mount DPAK

N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Surface Mount DPAK

Buy Now Datasheet
Singapore
30V 11.1A DPAK MOSFET Transistor
278-NTD4960NT4G
30V 11.1A DPAK MOSFET Transistor 278-NTD4960NT4G
N-CH MOSFET 30V 11.1A DPAK TO-252 SMT Power Transistor Product overview: NTD4960NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11.1A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11.1A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4960NT4G can be used for catalog matching and distributor lookup.

N-CH MOSFET 30V 11.1A DPAK TO-252 SMT Power Transistor Product overview: NTD4960NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11.1A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11.1A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4960NT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4960NT4G - 004171-NTD4960NT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4960NT4G
004171-NTD4960NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4960NT4G 004171-NTD4960NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 004171-NTD4960NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.07W (Ta), 35.71W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.9A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 1300pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 004171-NTD4960NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.07W (Ta), 35.71W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.9A (Ta), 55A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 1300pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD4960NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD4960NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD4960NT4G
MOSFET N-CH 30V 8.9A/55A DPAK

MOSFET N-CH 30V 8.9A/55A DPAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD4960NT4GOSTR-ND 278-NTD4960NT4G 004171-NTD4960NT4G NTD4960NT4G
Product Name Single FETs, MOSFETs 30V 11.1A DPAK MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4960NT4G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts 30 volts
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