onsemi 30V 11.1A DPAK MOSFET Transistor NTD4960NT4G

N-CH MOSFET 30V 11.1A DPAK TO-252 SMT Power Transistor Product overview: NTD4960NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11.1A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11.1A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4960NT4G can be used for catalog matching and distributor lookup.

N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Surface Mount DPAK

Manufacturer: ON Semiconductor
Win Source Part Number: 004171-NTD4960NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.07W (Ta), 35.71W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.9A (Ta), 55A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 1300pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient