Power MOSFET 30V 40A 13 mOhm Single N-Channel DPAK, 3.5 mm IPAK, Straight Lead, 75-TUBE Product overview: NTD4813N-35G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 40A, 13 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, 13 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4813N-35G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1083798-NTD4813N-35G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.6A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 7.9nC @ 4.5V
Max Input Capacitance: 860pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTD4813N-35G | 1083798-NTD4813N-35G |
| Product Name | N-Channel 30V 40A 13 mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4813N-35G |
| Polarity | N-Channel | N-Channel; N-Channel |
| PD | 35300 milliwatts | 1270 to 35300 milliwatts |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |