The NTD4302 is an N-Channel MOSFET designed for applications requiring high efficiency and low on-resistance. It features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 68A, making it suitable for power management in portable and battery-powered devices, such as computers and telecommunication equipment. The device exhibits an ultra-low on-resistance of 7.8 mOc at a gate-source voltage of 10V, which contributes to higher efficiency and extended battery life. It is also characterized by a logic level gate drive, allowing for easy interfacing with low-voltage control signals. The MOSFET is RoHS compliant and comes in a TO-252-3 package, ensuring compatibility with surface mount technology. Additionally, it has specified avalanche energy ratings and is capable of operating within a temperature range of -55¬8C to 150¬8C. This product is suitable for applications such as DC-DC converters and low voltage motor control.
N-Channel 30V 8.4A (Ta), 68A (Tc) 1.04W (Ta), 75W (Tc) Surface Mount DPAK
MOSFET N-CH 30V 8.4A/68A DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 004158-NTD4302T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.4A (Ta), 68A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2400pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 8.4A/68A DPAK
N CHANNEL MOSFET, 30V, 18.5A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:75W RoHS Compliant: Yes
MOSFET, N-CH, 30V, 68A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTD4302T4GOSTR-ND | NTD4302T4G | 004158-NTD4302T4G | NTD4302T4G | NTD4302T4G | 45J2124 | 82Y7097 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4302T4G | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 18.5A, D-Pak, Full Reel; Channel Type Onsemi | Mosfet, N-Ch, 30V, 68A, To-252-3; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); DPAK | 2400 pF @ 24 V | TO-3 | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 8400 milliamps | 18500 milliamps | 68000 milliamps |
