N-Ch MOSFET, 60V, 12A, 104mR, DPAK Product overview: NTD3055L104T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD3055L104T4G can be used for catalog matching and distributor lookup.
N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK
N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK
N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 004153-NTD3055L104T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Family Name: NTD3055L104
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 104 mOhm @ 6A, 5V
Alternative Parts (Cross-Reference): STDV3055L104T4G; FS10AS-06-T13; FS10AS-06; AP9973GH;
Introduction Date: September 16, 2001
ECCN: EAR99
Country of Origin: China, Czech Republic, Japan, Malaysia, United States of America, Vietnam
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Motor Drive & Control, Industrial
MOSFET N-CH 60V 12A DPAK
MOSFET N-CH 60V 12A DPAK
MOSFET, 60V, 12A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1.6V; Power Dissipation:48WRoHS Compliant: Yes
MOSFET, N CH, 60V, 12A, TO-252-4; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.089ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
MOSFET Transistor, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1.6V; Product Range:- RoHS Compliant: Yes
MOSFET, 60V, 12A, D-PAK, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:12A, ON RESISTANCE RDS(ON):0.089OHM, TRANSISTOR MOUNTING:SURFACE MOUNT, RDS(ON) TEST VOLTAGE VGS:5V, NO. OF PINS:3PINS ROHS COMPLI. FREE 2 YEAR RADWELL WARRANTY
60V 12A 104mΩ@5V,6A 2V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTD3055L104T4G | 463325 | 463325P | NTD3055L104T4GOSCT-ND | 004153-NTD3055L104T4G | NTD3055L104T4G | NTD3055L104T4G | 26K5099 | 90W9304 | 67R1393 | 18721649 | NTD3055L104T4G | NTD3055L104T4G |
| Product Name | 60V 12A DPAK MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD3055L104T4G | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, 60V, 12A, D-Pak; Channel Type Onsemi | Mosfet, N Ch, 60V, 12A, To-252-4; Transistor Polarity Onsemi | Mosfet Transistor, Full Reel; Channel Type Onsemi | Transistor | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||||
| PD | 48000 milliwatts | 1500 to 48000 milliwatts | 1500 milliwatts | 48000 milliwatts | 1500 milliwatts | ||||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||||
| MOSFET Operating Mode | Enhancement | ||||||||||||
| Package Type | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); DPAK | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-3; TO-252 (DPAK) | TO-3 | TO-252 (DPAK) |
