N-Channel 650V 13A (Tc) 106W (Tc) Surface Mount D-PAK (TO-252)
N-Channel 650V 13A (Tc) 106W (Tc) Surface Mount D-PAK (TO-252)
N-Channel 650V 13A (Tc) 106W (Tc) Surface Mount D-PAK (TO-252)
POWER MOSFET, N-CHANNEL, SUPERFE Product overview: NTD250N65S3H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD250N65S3H can be used for catalog matching and distributor lookup.
Win Source Part Number: 981129-NTD250N65S3H
Category: Discrete Semiconductor Products>Transistors
Series: SuperFET® III
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1.1mA
Power Dissipation (Max): 106W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252)
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1261 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 488-NTD250N65S3HTR,4
Drive Voltage (Max Rds On, Min Rds On): 10V
POWER MOSFET, N-CHANNEL, SUPERFE
MOSFET, N-CH, 650V, 13A, TO-252 ROHS COMPLIANT: YES
POWER MOSFET, N-CHANNEL, SUPERFE
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 488-NTD250N65S3HDKR-ND | 278-NTD250N65S3H | 2296451 | 981129-NTD250N65S3H | NTD250N65S3H | 50AJ5885 | NTD250N65S3H |
| Product Name | Single FETs, MOSFETs | N-Channel MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 13A, To-252 Rohs Compliant Onsemi | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | TO-252 (DPAK); TO-252 | SOT3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 650 volts | 650 volts | |||||
| PD | 106 milliwatts | 106000 milliwatts | 106000 milliwatts |
