Manufacturer: ON Semiconductor
Win Source Part Number: 1232353-NTD18N06L-1G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Part Status: Obsolete(EOL)
Family Name: NTD18N06L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: I-Pak
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 22nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 675pF @ 25V
Vgs (Maximum): ±15V
Power Dissipation (Maximum): 2.1W (Ta), 55W (Tj)
Rds On (Maximum) @ Id, Vgs: 65 mOhm @ 9A, 5V
Alternative Parts (Cross-Reference): HAF2007L-E; HAF2007L; STD16NF06L-1;
Introduction Date: September 05, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Through Hole I-PAK
MOSFET N-CH 60V 18A IPAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors |
| Product Number | 1232353-NTD18N06L-1G | NTD18N06L-1G-ND | NTD18N06L-1G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD18N06L-1G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| QG | 22 nC | ||
| PD | 2100 to 55000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |