onsemi Single FETs, MOSFETs NTD18N06L-1G

Description
N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Through Hole I-PAK
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Description
N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Through Hole I-PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - NTD18N06L-1G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD18N06L-1G-ND
Single FETs, MOSFETs NTD18N06L-1G-ND
N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Through Hole I-PAK

N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD18N06L-1G - 1232353-NTD18N06L-1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD18N06L-1G
1232353-NTD18N06L-1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD18N06L-1G 1232353-NTD18N06L-1G
Manufacturer: ON Semiconductor Win Source Part Number: 1232353-NTD18N06L-1G Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-251-3 Short Leads, IPak, TO-251AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Part Status: Obsolete(EOL) Family Name: NTD18N06L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Manufacturer Homepage: www.onsemi.com Manufacturer Package: I-Pak Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 675pF @ 25V Vgs (Maximum): ±15V Power Dissipation (Maximum): 2.1W (Ta), 55W (Tj) Rds On (Maximum) @ Id, Vgs: 65 mOhm @ 9A, 5V Alternative Parts (Cross-Reference): HAF2007L-E; HAF2007L; STD16NF06L-1; Introduction Date: September 05, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1232353-NTD18N06L-1G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Part Status: Obsolete(EOL)
Family Name: NTD18N06L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: I-Pak
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 22nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 675pF @ 25V
Vgs (Maximum): ±15V
Power Dissipation (Maximum): 2.1W (Ta), 55W (Tj)
Rds On (Maximum) @ Id, Vgs: 65 mOhm @ 9A, 5V
Alternative Parts (Cross-Reference): HAF2007L-E; HAF2007L; STD16NF06L-1;
Introduction Date: September 05, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD18N06L-1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD18N06L-1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD18N06L-1G
MOSFET N-CH 60V 18A IPAK

MOSFET N-CH 60V 18A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number NTD18N06L-1G-ND 1232353-NTD18N06L-1G NTD18N06L-1G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD18N06L-1G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3 22 nC @ 5 V
QG 22 nC
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