onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD12N10G NTD12N10G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083745-NTD12N10G Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 165 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083745-NTD12N10G Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 165 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD12N10G - 1083745-NTD12N10G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD12N10G
1083745-NTD12N10G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD12N10G 1083745-NTD12N10G
Manufacturer: ON Semiconductor Win Source Part Number: 1083745-NTD12N10G Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 165 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083745-NTD12N10G
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 165 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NTD12N10GOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD12N10GOS-ND
Single FETs, MOSFETs NTD12N10GOS-ND
N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK

N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK

Buy Now Datasheet
Singapore
12 A 100 V DPAK MOSFET Transistor
278-NTD12N10G
12 A 100 V DPAK MOSFET Transistor 278-NTD12N10G
Power MOSFET, 12 A, 100 V, DPAK (SINGLE GAUGE) TO-252, 75-TUBE Product overview: NTD12N10G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12 A, 100 V, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12 A, 100 V, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD12N10G can be used for catalog matching and distributor lookup.

Power MOSFET, 12 A, 100 V, DPAK (SINGLE GAUGE) TO-252, 75-TUBE Product overview: NTD12N10G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12 A, 100 V, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12 A, 100 V, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD12N10G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 18722527 - Radwell International
Willingboro, NJ, United States
Transistor
18722527
Transistor 18722527
MOSFET; TRANSISTOR TYPE:MOSFET; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE. FREE 2 YEAR RADWELL WARRANTY

MOSFET; TRANSISTOR TYPE:MOSFET; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1083745-NTD12N10G NTD12N10GOS-ND 278-NTD12N10G 18722527
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD12N10G Single FETs, MOSFETs 12 A 100 V DPAK MOSFET Transistor Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 1280 to 56600 milliwatts 56600 milliwatts
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