onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD12N10G NTD12N10G

Manufacturer: ON Semiconductor
Win Source Part Number: 1083745-NTD12N10G
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 165 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK

Power MOSFET, 12 A, 100 V, DPAK (SINGLE GAUGE) TO-252, 75-TUBE Product overview: NTD12N10G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12 A, 100 V, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12 A, 100 V, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD12N10G can be used for catalog matching and distributor lookup.