onsemi Single FETs, MOSFETs NTBL150N60S5H

The NTBL150N60S5H is a 600 V, 19 A N-channel SUPERFET MOSFET designed for high-efficiency switching applications such as telecom, server, EV charger, and industrial power supplies. It is packaged in an H−PSOF8L case measuring 9.90 × 11.68 mm with a Kelvin Source configuration for reduced parasitic inductance and improved thermal performance. The device has a maximum on-resistance of 150 mΩ at 10 V gate drive and 25°C, a pulsed drain current rating of 67 A, and a junction operating temperature range of −55°C to +150°C. It is 100% avalanche tested with a single-pulse avalanche energy rating of 153 mJ and meets RoHS compliance. Thermal resistance from junction to case is 0.94°C/W.