onsemi Single FETs, MOSFETs NTBL080N60S5H

The NTBL080N60S5H is a 600 V N-channel MOSFET in the H-PSOF8L package, designed for high-efficiency switching in telecom, EV charging, and industrial power supplies. It has a maximum continuous drain current of 32 A at 25°C and a typical on-resistance of 64 mΩ at 10 V gate voltage. The device features a Kelvin source configuration for improved switching performance, is 100% avalanche tested with single-pulse avalanche energy of 287 mJ, and operates from −55°C to +150°C junction temperature. Its thermal resistance from junction to case is 0.6 °C/W.