onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single NTBGS1D5N06C

Description
Win Source Part Number: 1116263-NTBGS1D5N06C Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V Vgs(th) (Max) @ Id: 4V @ 318µA Power Dissipation (Max): 3.7W (Ta), 211W (Tc) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 488-NTBGS1D5N06CCT,4 88-NTBGS1D5N06CTR,48 8-NTBGS1D5N06CDKR Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1116263-NTBGS1D5N06C - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 488-NTBGS1D5N06CTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 488-NTBGS1D5N06CCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTBGS1D5N06C - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • Mosfet, N-Ch, 60V, 267A, To-263 Rohs Compliant Onsemi - 32AJ8433 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote
Description
Win Source Part Number: 1116263-NTBGS1D5N06C Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V Vgs(th) (Max) @ Id: 4V @ 318µA Power Dissipation (Max): 3.7W (Ta), 211W (Tc) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 488-NTBGS1D5N06CCT,4 88-NTBGS1D5N06CTR,48 8-NTBGS1D5N06CDKR Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 1116263-NTBGS1D5N06C is an N-Channel MOSFET from Win Source Electronics, designed for power applications. It features a maximum drain-to-source voltage of 60 V and a continuous drain current rating of 267 A at a case temperature of 25°C. The device has a low on-resistance of 1.55 mΩ at 12 V and 64 A, which helps minimize conduction losses. This MOSFET is suitable for various applications, including power tools, battery-operated vacuums, UAVs, and home automation systems. It operates over a temperature range of -55°C to +175°C and is compliant with RoHS standards, being both Pb-free and halogen-free. The device is packaged in a D2PAK7 (TO-263) format and is available in tape and reel for easy handling in automated assembly processes. Engineers should consider this MOSFET for projects requiring high efficiency and reliability in power management applications.

Datasheet Summary
Powered by GS/AI

The 1116263-NTBGS1D5N06C is an N-Channel MOSFET from Win Source Electronics, designed for power applications. It features a maximum drain-to-source voltage of 60 V and a continuous drain current rating of 267 A at a case temperature of 25°C. The device has a low on-resistance of 1.55 mΩ at 12 V and 64 A, which helps minimize conduction losses. This MOSFET is suitable for various applications, including power tools, battery-operated vacuums, UAVs, and home automation systems. It operates over a temperature range of -55°C to +175°C and is compliant with RoHS standards, being both Pb-free and halogen-free. The device is packaged in a D2PAK7 (TO-263) format and is available in tape and reel for easy handling in automated assembly processes. Engineers should consider this MOSFET for projects requiring high efficiency and reliability in power management applications.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1116263-NTBGS1D5N06C - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1116263-NTBGS1D5N06C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1116263-NTBGS1D5N06C
Win Source Part Number: 1116263-NTBGS1D5N06C Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V Vgs(th) (Max) @ Id: 4V @ 318µA Power Dissipation (Max): 3.7W (Ta), 211W (Tc) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 488-NTBGS1D5N06CCT,4 88-NTBGS1D5N06CTR,48 8-NTBGS1D5N06CDKR Drive Voltage (Max Rds On, Min Rds On): 10V, 12V

Win Source Part Number: 1116263-NTBGS1D5N06C
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V
Vgs(th) (Max) @ Id: 4V @ 318µA
Power Dissipation (Max): 3.7W (Ta), 211W (Tc)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 488-NTBGS1D5N06CCT,488-NTBGS1D5N06CTR,488-NTBGS1D5N06CDKR
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V

Buy Now Datasheet
Single FETs, MOSFETs - 488-NTBGS1D5N06CTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTBGS1D5N06CTR-ND
Single FETs, MOSFETs 488-NTBGS1D5N06CTR-ND
N-Channel 60V 35A (Ta), 267A (Tc) 3.7W (Ta), 211W (Tc) Surface Mount D2PAK (TO-263)

N-Channel 60V 35A (Ta), 267A (Tc) 3.7W (Ta), 211W (Tc) Surface Mount D2PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 488-NTBGS1D5N06CCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTBGS1D5N06CCT-ND
Single FETs, MOSFETs 488-NTBGS1D5N06CCT-ND
N-Channel 60V 35A (Ta), 267A (Tc) 3.7W (Ta), 211W (Tc) Surface Mount D2PAK (TO-263)

N-Channel 60V 35A (Ta), 267A (Tc) 3.7W (Ta), 211W (Tc) Surface Mount D2PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTBGS1D5N06C - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTBGS1D5N06C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTBGS1D5N06C
POWER MOSFET, 60 V, 1.62 M?, 267

POWER MOSFET, 60 V, 1.62 M?, 267

Supplier's Site
Mosfet, N-Ch, 60V, 267A, To-263 Rohs Compliant Onsemi - 32AJ8433 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 267A, To-263 Rohs Compliant Onsemi
32AJ8433
Mosfet, N-Ch, 60V, 267A, To-263 Rohs Compliant Onsemi 32AJ8433
MOSFET, N-CH, 60V, 267A, TO-263 ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 267A, TO-263 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1116263-NTBGS1D5N06C 488-NTBGS1D5N06CTR-ND NTBGS1D5N06C 32AJ8433
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 267A, To-263 Rohs Compliant Onsemi
Polarity N-Channel N-Channel
QG 78.6 nC
PD 3700 to 211000 milliwatts
Unlock Full Specs
to access all available technical data