The 1116263-NTBGS1D5N06C is an N-Channel MOSFET from Win Source Electronics, designed for power applications. It features a maximum drain-to-source voltage of 60 V and a continuous drain current rating of 267 A at a case temperature of 25¬8C. The device has a low on-resistance of 1.55 mOc at 12 V and 64 A, which helps minimize conduction losses. This MOSFET is suitable for various applications, including power tools, battery-operated vacuums, UAVs, and home automation systems. It operates over a temperature range of -55¬8C to +175¬8C and is compliant with RoHS standards, being both Pb-free and halogen-free. The device is packaged in a D2PAK7 (TO-263) format and is available in tape and reel for easy handling in automated assembly processes. Engineers should consider this MOSFET for projects requiring high efficiency and reliability in power management applications.
Win Source Part Number: 1116263-NTBGS1D5N06C
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V
Vgs(th) (Max) @ Id: 4V @ 318µA
Power Dissipation (Max): 3.7W (Ta), 211W (Tc)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 488-NTBGS1D5N06CCT,4
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
N-Channel 60V 35A (Ta), 267A (Tc) 3.7W (Ta), 211W (Tc) Surface Mount D2PAK (TO-263)
N-Channel 60V 35A (Ta), 267A (Tc) 3.7W (Ta), 211W (Tc) Surface Mount D2PAK (TO-263)
N-Channel 60V 35A (Ta), 267A (Tc) 3.7W (Ta), 211W (Tc) Surface Mount D2PAK (TO-263)
MOSFET, N-CH, 60V, 267A, TO-263 ROHS COMPLIANT: YES
POWER MOSFET, 60 V, 1.62 M?, 267
| Win Source Electronics | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1116263-NTBGS1D5N06C | 488-NTBGS1D5N06CTR-ND | 32AJ8433 | NTBGS1D5N06C |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 267A, To-263 Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| QG | 78.6 nC | |||
| PD | 3700 to 211000 milliwatts |
