N-Channel 100V 76A (Tc) 188W (Tc) Surface Mount D²PAK
N-Channel 100V 76A (Tc) 188W (Tc) Surface Mount D²PAK
N-Channel 100V 76A (Tc) 188W (Tc) Surface Mount D²PAK
100V 76A N-CH Power MOSFET D2PAK SMT Product overview: NTB6410ANT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 76A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 76A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB6410ANT4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1083710-NTB6410ANT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 188W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 76A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 4500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 76A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
MOSFET NFET D2PAK 100V 76A 13MOH
MOSFET, N-CH, 100V, 76A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET Transistor, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:76A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:- RoHS Compliant: Yes
MOSFET N-CH 100V 76A D2PAK
MOSFET N-CH 100V 76A D2PAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTB6410ANT4GOSDKR-ND | 278-NTB6410ANT4G | 1083710-NTB6410ANT4G | NTB6410ANT4G | 50AC6476 | 71R6713 | NTB6410ANT4G | NTB6410ANT4G |
| Product Name | Single FETs, MOSFETs | 100V 76A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB6410ANT4G | MOSFET | Mosfet, N-Ch, 100V, 76A, To-263; Transistor Polarity Onsemi | Mosfet Transistor, Full Reel; Channel Type Onsemi | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-3; TO-263 | TO-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 188000 milliwatts | 188000 milliwatts | 188000 milliwatts |
