Manufacturer: ON Semiconductor
Win Source Part Number: 1083704-NTB5605PT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 18.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 22nC @ 5V
Max Input Capacitance: 1190pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 140 mOhm @ 8.5A, 5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
P-Channel MOSFET -60V, 18.5A, 140mΩ, D2PAK Product overview: NTB5605PT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, 18.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 18.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB5605PT4G can be used for catalog matching and distributor lookup.
P-Channel 60V 18.5A (Ta) 88W (Tc) Surface Mount D²PAK
MOSFET P-CH 60V 18.5A D2PAK
P CHANNEL MOSFET, -60V, 18.5A, D2-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
P CHANNEL MOSFET, -60V, 18.5A, D2-PAK; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.5A; On Resistance Rds(on):0.14ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:5V RoHS Compliant: Yes
MOSFET P-CH 60V 18.5A D2PAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1083704-NTB5605PT4G | 278-NTB5605PT4G | NTB5605PT4GOSTR-ND | NTB5605PT4G | NTB5605PT4G | 09R9633 | 42K2402 | NTB5605PT4G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB5605PT4G | P-Channel -60V 18.5A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | P Channel Mosfet, -60V, 18.5A, D2-Pak; Channel Type Onsemi | P Channel Mosfet, -60V, 18.5A, D2-Pak; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 88000 milliwatts | 88000 milliwatts | 88000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
