onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB5426NT4G NTB5426NT4G

Manufacturer: ON Semiconductor
Win Source Part Number: 209321-NTB5426NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 215W (Tc)
Family Name: NTB5426N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 5800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): NVB5426NT4G; SQM110N06-06; SQM110N06-06-GE3;
Introduction Date: November 01, 2008
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

N-Channel MOSFET 60V 120A 6mR D2PAK Product overview: NTB5426NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB5426NT4G can be used for catalog matching and distributor lookup.

N-Channel 60V 120A (Tc) 215W (Tc) Surface Mount D²PAK