N-Channel 60V 120A (Tc) 215W (Tc) Surface Mount D²PAK
Manufacturer: ON Semiconductor
Win Source Part Number: 209321-NTB5426NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 215W (Tc)
Family Name: NTB5426N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 5800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): NVB5426NT4G; SQM110N06-06; SQM110N06-06-GE3;
Introduction Date: November 01, 2008
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 120A D2PAK
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTB5426NT4G-ND | 209321-NTB5426NT4G | NTB5426NT4G |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB5426NT4G | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| V(BR)DSS | 60 volts |
