onsemi Single FETs, MOSFETs NTB23N03R

Description
N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D²PAK
Request a Quote Datasheet
Description
N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D²PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTB23N03R-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB23N03R-ND
Single FETs, MOSFETs NTB23N03R-ND
N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D²PAK

N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D²PAK

Buy Now Datasheet
FETs - Single - NTB23N03R - 810774-NTB23N03R - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - NTB23N03R
810774-NTB23N03R
FETs - Single - NTB23N03R 810774-NTB23N03R
Manufacturer: ON Semiconductor Win Source Part Number: 810774-NTB23N03R Packaging: Tube Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25V Part Status: Obsolete (End Of Life) Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 37.5W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 45mOhm at 6A, 10V Gate Charge (Qg) (Maximum) at Vgs: 3.76nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 225pF at 20V Current - Continuous Drain (Id) at 25°C: 23A Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 810774-NTB23N03R
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25V
Part Status: Obsolete (End Of Life)
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 37.5W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 45mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 3.76nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 225pF at 20V
Current - Continuous Drain (Id) at 25°C: 23A
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: ±20V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB23N03R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB23N03R
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB23N03R
MOSFET N-CH 25V 23A D2PAK

MOSFET N-CH 25V 23A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number NTB23N03R-ND 810774-NTB23N03R NTB23N03R
Product Name Single FETs, MOSFETs FETs - Single - NTB23N03R Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 3.76 nC @ 4.5 V
QG 3.76 nC
Unlock Full Specs
to access all available technical data