onsemi Single FETs, MOSFETs NTB23N03R

N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D²PAK

6A, 25V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418AA-01, D2PAK-3 Product overview: NTB23N03R from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 6A, 25V, 0.06ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6A, 25V, 0.06ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB23N03R can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 810774-NTB23N03R
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25V
Part Status: Obsolete (End Of Life)
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 37.5W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 45mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 3.76nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 225pF at 20V
Current - Continuous Drain (Id) at 25°C: 23A
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: ±20V