onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB18N06LG NTB18N06LG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083686-NTB18N06LG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 20nC @ 5V Max Input Capacitance: 440pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 100 mOhm @ 7.5A, 5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient Application Field: Used in Automotive, Power Management
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083686-NTB18N06LG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 20nC @ 5V Max Input Capacitance: 440pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 100 mOhm @ 7.5A, 5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient Application Field: Used in Automotive, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB18N06LG - 1083686-NTB18N06LG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB18N06LG
1083686-NTB18N06LG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB18N06LG 1083686-NTB18N06LG
Manufacturer: ON Semiconductor Win Source Part Number: 1083686-NTB18N06LG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 20nC @ 5V Max Input Capacitance: 440pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 100 mOhm @ 7.5A, 5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient Application Field: Used in Automotive, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 1083686-NTB18N06LG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 48.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 100 mOhm @ 7.5A, 5V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Automotive, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - NTB18N06LG-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB18N06LG-ND
Single FETs, MOSFETs NTB18N06LG-ND
N-Channel 60V 15A (Tc) 48.4W (Tc) Surface Mount D2PAK

N-Channel 60V 15A (Tc) 48.4W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Singapore
N-Channel 15A 60V 0.1ohm MOSFET Transistor
278-NTB18N06LG
N-Channel 15A 60V 0.1ohm MOSFET Transistor 278-NTB18N06LG
15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3 Product overview: NTB18N06LG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 15A, 60V, 0.1ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 15A, 60V, 0.1ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB18N06LG can be used for catalog matching and distributor lookup.

15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3 Product overview: NTB18N06LG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 15A, 60V, 0.1ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 15A, 60V, 0.1ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB18N06LG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB18N06LG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB18N06LG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB18N06LG
MOSFET N-CH 60V 15A D2PAK

MOSFET N-CH 60V 15A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1083686-NTB18N06LG NTB18N06LG-ND 278-NTB18N06LG NTB18N06LG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB18N06LG Single FETs, MOSFETs N-Channel 15A 60V 0.1ohm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 48400 milliwatts 48400 milliwatts
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