onsemi Single FETs, MOSFETs NTB125N02RT4G

Description
N-Channel 24V 95A (Ta), 120.5A (Tc) 1.98W (Ta), 113.6W (Tc) Surface Mount D2PAK
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Description
N-Channel 24V 95A (Ta), 120.5A (Tc) 1.98W (Ta), 113.6W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - NTB125N02RT4GOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB125N02RT4GOS-ND
Single FETs, MOSFETs NTB125N02RT4GOS-ND
N-Channel 24V 95A (Ta), 120.5A (Tc) 1.98W (Ta), 113.6W (Tc) Surface Mount D2PAK

N-Channel 24V 95A (Ta), 120.5A (Tc) 1.98W (Ta), 113.6W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB125N02RT4G - 1083684-NTB125N02RT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB125N02RT4G
1083684-NTB125N02RT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB125N02RT4G 1083684-NTB125N02RT4G
Manufacturer: ON Semiconductor Win Source Part Number: 1083684-NTB125N02RT4 G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 95A (Ta), 120.5A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 28nC @ 4.5V Max Input Capacitance: 3440pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.6 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083684-NTB125N02RT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 95A (Ta), 120.5A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 28nC @ 4.5V
Max Input Capacitance: 3440pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB125N02RT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB125N02RT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB125N02RT4G
MOSFET N-CH 24V 95A/120.5A D2PAK

MOSFET N-CH 24V 95A/120.5A D2PAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTB125N02RT4GOS-ND 1083684-NTB125N02RT4G NTB125N02RT4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB125N02RT4G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 24 volts
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