onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single NTB10N60

The NTB10N60 is an N-channel MOSFET designed for high voltage, high speed switching applications in power supplies, converters, motor controls, and bridge circuits. It is packaged in a D2PAK case with dimensions of 14.60 to 15.88 mm in length and 8.64 to 9.65 mm in width. It has a drain-source voltage rating of 600 V, a continuous drain current of 10 A at 25°C, and an on-resistance of 0.75 Ω at 10 V gate-source voltage. The device supports a maximum junction temperature of 150°C and has a specified avalanche energy of 500 mJ. Its thermal resistance from junction to case is 0.62 °C/W. The part is RoHS compliant and meets AEC-Q200 qualification standards.