onsemi Bipolar Transistor Arrays, Pre-Biased NSVMUN5314DW1T3G

TRANS PREBIAS 1NPN 1PNP SOT-363

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

TRANS PREBIAS 1NPN 1PNP SOT-363

Complementary Bipolar Digital Transistor (BRT), 10000-REEL Product overview: NSVMUN5314DW1T3G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSVMUN5314DW1T3G can be used for catalog matching and distributor lookup.

Win Source Part Number: 1151050-NSVMUN5314DW1T3G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel (TR)
Standard Package: 10,000
Mounting: SMD (SMT)
Power - Max: 250mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Alternative Parts (Cross-Reference): NSVMUN5314DW1T3G.;
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Base Product Number: NSVMUN5314