PNP Bipolar Transistor, 3000-REEL Product overview: NSVMMBT5087LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NSVMMBT5087LT1G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 50V 50mA 40MHz 225mW Surface Mount SOT-23-3 (TO-236)
Bipolar (BJT) Transistor PNP 50V 50mA 40MHz 225mW Surface Mount SOT-23-3 (TO-236)
Bipolar (BJT) Transistor PNP 50V 50mA 40MHz 225mW Surface Mount SOT-23-3 (TO-236)
Manufacturer: onsemi
Win Source Part Number: 1325657-NSVMMBT5087L
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3 (TO-236)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-236-3, SC-59, SOT-23-3
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: NSVMMBT5087LT1G-ND,2
Base Product Number: NSVMMBT5087
RoHS Status: ROHS3 Compliant
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| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 276-NSVMMBT5087LT1G | NSVMMBT5087LT1GOSTR-ND | 1325657-NSVMMBT5087LT1G | NSVMMBT5087LT1G | NSVMMBT5087LT1G | NSVMMBT5087LT1G | 68X4348 | NSVMMBT5087LT1G |
| Product Name | Bipolar Transistor | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Bipolar Transistors - BJT | Single Bipolar Transistors | Pnp Bipolar Transistor / Reel Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| IC(max) | 50 milliamps | 50 milliamps | 50 milliamps | 50 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts | |||||
| PD | 225 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Polarity | PNP | PNP | PNP | PNP; PNP | PNP |