onsemi Single Bipolar Transistors NSS35200CF8T1G

Description
Bipolar (BJT) Transistor PNP 35V 2A 100MHz 635mW Surface Mount ChipFET™
  • Single Bipolar Transistors - NSS35200CF8T1GOSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - NSS35200CF8T1G - 100336-NSS35200CF8T1G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NSS35200CF8T1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 35V 2A 100MHz 635mW Surface Mount ChipFET™
Request a Quote Datasheet

Suppliers

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Product
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Single Bipolar Transistors - NSS35200CF8T1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
NSS35200CF8T1GOSTR-ND
Single Bipolar Transistors NSS35200CF8T1GOSTR-ND
Bipolar (BJT) Transistor PNP 35V 2A 100MHz 635mW Surface Mount ChipFET™

Bipolar (BJT) Transistor PNP 35V 2A 100MHz 635mW Surface Mount ChipFET™

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - NSS35200CF8T1G - 100336-NSS35200CF8T1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - NSS35200CF8T1G
100336-NSS35200CF8T1G
TRANSISTORS - Transistors (BJT) - Single - NSS35200CF8T1G 100336-NSS35200CF8T1G
Manufacturer: ON Semiconductor Win Source Part Number: 100336-NSS35200CF8T1 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 35V Max Vce (sat): 300mV @ 20mA, 2A Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 1.5A, 2V Maximum Power Dissipation: 635mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 100336-NSS35200CF8T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 35V
Max Vce (sat): 300mV @ 20mA, 2A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 100 @ 1.5A, 2V
Maximum Power Dissipation: 635mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NSS35200CF8T1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NSS35200CF8T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NSS35200CF8T1G
TRANS PNP 35V 2A CHIPFET

TRANS PNP 35V 2A CHIPFET

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number NSS35200CF8T1GOSTR-ND 100336-NSS35200CF8T1G NSS35200CF8T1G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - NSS35200CF8T1G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP
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