onsemi Single, Pre-Biased Bipolar Transistors NSBA123YMXWTBG

The NSBA123YMXWTBG is a PNP bias resistor transistor (BRT) in an XDFNW3 package, measuring 1.00 mm × 1.00 mm × 0.38 mm, designed for digital switching and IC input control. It integrates a 2.2 kΩ series base resistor and a 10 kΩ base-emitter resistor, with a collector-emitter voltage rating of -50 V and a maximum collector current of 100 mA. The device features a maximum power dissipation of 450 mW at 25°C and a thermal resistance of 145 °C/W. It is AEC-Q101 qualified, RoHS compliant, and housed in a wettable flank package for automated optical inspection. The input voltage off range is -0.75 V to -0.3 V, and the input voltage on range is -2.5 V to -1.15 V at IC = -20 mA. The DC current gain is 35 minimum at VCE = -10 V and IC = -5 mA.