onsemi Memory NM93C13N

Description
IC EEPROM 256B SPI 1MHZ 8DIP
  • Memory - NM93C13N - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - NM93C13N - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC EEPROM 256B SPI 1MHZ 8DIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NM93C13N - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
NM93C13N
Memory NM93C13N
IC EEPROM 256B SPI 1MHZ 8DIP

IC EEPROM 256B SPI 1MHZ 8DIP

Supplier's Site Datasheet
Memory - NM93C13N - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
NM93C13N
Memory NM93C13N
EEPROM Memory IC 256bit Microwire 1 MHz 8-DIP

EEPROM Memory IC 256bit Microwire 1 MHz 8-DIP

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number NM93C13N NM93C13N
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420770P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420770P
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - 24C01 - Lingto Electronic Limited
Rochester Electronics
Memory
24C01
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
Memory - 16-100035-01-T - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
16-100035-01-T
View Details
2 suppliers
Memory - SMJ4C1024 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ4C1024
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details