onsemi Memory NM27C040V120

Description
EPROM - OTP Memory IC 4Mb (512K x 8) Parallel 120ns 32-PLCC (14x11.46)
Request a Quote Datasheet
Description
EPROM - OTP Memory IC 4Mb (512K x 8) Parallel 120ns 32-PLCC (14x11.46)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NM27C040V120-ND - DigiKey
Thief River Falls, MN, United States
EPROM - OTP Memory IC 4Mb (512K x 8) Parallel 120ns 32-PLCC (14x11.46)

EPROM - OTP Memory IC 4Mb (512K x 8) Parallel 120ns 32-PLCC (14x11.46)

Buy Now Datasheet
Memory - NM27C040V120 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - OTP Memory IC 4Mbit Parallel 120 ns 32-PLCC (14x11.46)

EPROM - OTP Memory IC 4Mbit Parallel 120 ns 32-PLCC (14x11.46)

Buy Now Datasheet
IC EPROM 4MBIT PARALLEL 32PLCC

IC EPROM 4MBIT PARALLEL 32PLCC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NM27C040V120 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NM27C040V120
Integrated Circuits (ICs) - Memory - Memory NM27C040V120
IC EPROM 4MBIT PARALLEL 32PLCC

IC EPROM 4MBIT PARALLEL 32PLCC

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NM27C040V120-ND NM27C040V120 NM27C040V120 NM27C040V120
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EPROM EPROM; EPROM EPROM; EPROM EPROM; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4DDR232M64 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
SDRAM - 2420772 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - 16-4099-01 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers