onsemi Memory NM27C010VE120

Description
EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 120ns 32-PLCC (14x11.46)
Request a Quote Datasheet
Description
EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 120ns 32-PLCC (14x11.46)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NM27C010VE120-ND - DigiKey
Thief River Falls, MN, United States
EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 120ns 32-PLCC (14x11.46)

EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 120ns 32-PLCC (14x11.46)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 1015373-NM27C010VE120 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1015373-NM27C010VE120
Integrated Circuits (ICs) - Memory 1015373-NM27C010VE120
Win Source Part Number: 1015373-NM27C010VE12 0 Category: Integrated Circuits (ICs)>Memory Package: Tube Standard Package: 30 Mounting: SMD (SMT) Technology: EPROM - OTP Memory Type: Non-Volatile Memory Size: 1Mb (128K x 8) Access Time: 120 ns Voltage - Supply: 4.5V ~ 5.5V Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (14x11.46) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: EPROM Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 53 pct. HTSUS: 8542.32.0071 Mfr: Fairchild Semiconductor Other Names: 2156-NM27C010VE120-F S,FAIFSCNM27C010VE12 0 Base Product Number: NM27C010 Product Status: Obsolete RoHS Status: RoHS non-compliant

Win Source Part Number: 1015373-NM27C010VE120
Category: Integrated Circuits (ICs)>Memory
Package: Tube
Standard Package: 30
Mounting: SMD (SMT)
Technology: EPROM - OTP
Memory Type: Non-Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 120 ns
Voltage - Supply: 4.5V ~ 5.5V
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (14x11.46)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: EPROM
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
HTSUS: 8542.32.0071
Mfr: Fairchild Semiconductor
Other Names: 2156-NM27C010VE120-FS,FAIFSCNM27C010VE120
Base Product Number: NM27C010
Product Status: Obsolete
RoHS Status: RoHS non-compliant

Buy Now Datasheet
IC EPROM 1MBIT PARALLEL 32PLCC

IC EPROM 1MBIT PARALLEL 32PLCC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NM27C010VE120 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NM27C010VE120
Integrated Circuits (ICs) - Memory - Memory NM27C010VE120
IC EPROM 1MBIT PARALLEL 32PLCC

IC EPROM 1MBIT PARALLEL 32PLCC

Supplier's Site
Memory - NM27C010VE120 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - OTP Memory IC 1Mbit Parallel 120 ns 32-PLCC (14x11.46)

EPROM - OTP Memory IC 1Mbit Parallel 120 ns 32-PLCC (14x11.46)

Buy Now Datasheet
Memory - NM27C010VE120 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - OTP Memory IC 1Mbit Parallel 120 ns 32-PLCC (14x11.46)

EPROM - OTP Memory IC 1Mbit Parallel 120 ns 32-PLCC (14x11.46)

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NM27C010VE120-ND 1015373-NM27C010VE120 NM27C010VE120 NM27C010VE120 NM27C010VE120
Product Name Memory Integrated Circuits (ICs) - Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EPROM EPROM; Non-Volatile EPROM; EPROM EPROM; Non-Volatile EPROM; EPROM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 2437530 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Flash Memory - 1882749 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
FIFOs Memory - 4703BDM - Quarktwin Technology Ltd.
Texas Instruments
View Details
2 suppliers
Memory - 5962-9459901MYA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category NVSRAM; SRAM Chip
Access Time 55 ns
Density 64 kbits
View Details