onsemi Integrated Circuits (ICs) - Memory - Memory NM25C040EN

Description
EEPROM, 512X8, Serial, CMOS, PDIP8
Request a Quote Datasheet
Description
EEPROM, 512X8, Serial, CMOS, PDIP8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NM25C040EN - Rochester Electronics
Newburyport, MA, United States
EEPROM, 512X8, Serial, CMOS, PDIP8

EEPROM, 512X8, Serial, CMOS, PDIP8

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NM25C040EN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NM25C040EN
Integrated Circuits (ICs) - Memory - Memory NM25C040EN
IC EEPROM 4KBIT SPI 2.1MHZ 8DIP

IC EEPROM 4KBIT SPI 2.1MHZ 8DIP

Supplier's Site
Memory - NM25C040EN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 4Kbit SPI 2.1 MHz 8-DIP

EEPROM Memory IC 4Kbit SPI 2.1 MHz 8-DIP

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number NM25C040EN NM25C040EN NM25C040EN
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Logic Family CMOS
Package Type DIP; PDIP8 DIP; 8-DIP (0.300\", 7.62mm)
Data Rate 2 MHz
Unlock Full Specs
to access all available technical data

Similar Products

SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG/EM - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
Memory - MYX4DD3K128M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024000 kbits
View Details
Flash Memory - 1882749P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details
Memory - 28270509 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers